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Thesis (for Master's degree) (m/f) Short Time Reliability of Integrated Transistors 3-6 Monate Abschlussarbeit in München

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-Summarizing typical CMOS (FET devices, R poly, ESD diode) and SiGe (Bipolar devices) reliability failure mechanisms
-Analyzing the failure mechanisms and predicting the impact on operating life time
-Developing and implementing a measurement setup to measure reliability effects
-Quantifying the tradeoffs between Radio-Frequency performance and reliability on device level
-Checking the reliability features included in a foundry Process Development Kit
-Developing a sample design to demonstrate the impact of circuit performance and operating life time tradeoffs
-Tuning the sample design to achieve best performance


-University degree in communications/electrical engineering, physics or similar discipline
-Profound knowledge of semiconductor devices and the physics behind
-Basic experience in ASIC design or device design
-Fundamental skills in using CAD tools for circuit simulation (e.g. Cadence Spectre/Virtuoso)
-High self-motivation and aim to take responsibility within a highly productive and goal-driven project team
-Good communication skills in German or English

So bewerben Sie sich bei uns

If this sounds like the job you‘ve been looking for, please apply online at Rohde & Schwarz GmbH & Co. KG, Human Resources, Ref. number: 50415093. If you have any questions, please contact our recruiting team: +49 89 4129 13801.

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